Harufusa Kondo 博士 |
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报告摘要:Mitsubishi Electric Corp. has long experience of innovative power devices. This speech will cover brief history and latest advancement of our power devices, which includes Si-IGBT and SiC chip technology. It also describes power devices for such application as industry, railway/power, white goods, and automotive. |
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报告人简介:Harufusa Kondo received the B.S., M.S., and Ph.D. degrees from Osaka University, JAPAN. In 1985, he joined the LSI R&D Laboratory, Mitsubishi Electric Corporation, where he had been engaged in the design of system VLSI’s for digital communication. In 2003, he moved to the Optical and High-frequency Device Works as a manager of Optical Transceiver. Since 2009, he has been working at Power Device Works for the development of DIPIPM™, Industrial IGBT modules, and high-voltage modules for railway application including SiC. He is currently the Senior Technical Advisor at Power Device Works, Mitsubishi Electric Corporation. |
论文初稿提交截止时间
(
2021年6月30日 2021年7月20日
)
专题讲座、工业报告征集截止时间
(
2021年6月30日 2021年7月20日
)
论文录用通知时间
( 2021年8月16日 )
论文终稿提交截止时间
( 2021年9月15日 )
报名系统开放时间
( 2021年8月16日 )
注册优惠截止期
( 2021年10月12日 )
大会时间
( 2021年11月12-15日 )